Effects of Cu seeding layer on Si grown by partially ionized beam in plasma enhanced chemical vapor deposition

Abstract

Plasma enhanced chemical vapor deposition of the Cu films on Si substrate was investigated in which 30 Angstrom Cu-seed layer on the substrate was formed by partially ionized beam prior to deposition. In order to elucidate the difference in growth mechanism of Cu film between on Cu-seed layer and on bare Si, the initial stage of Cu-seed layer grown by partially ionized beam was studied by transmission electron microscopy and different nucleation formation processes from conventional method was shown. A high deposition rate and an improved adhesion strength were achieved when thick Cu film on the Cu seeded Si substrate was deposited by plasma enhanced chemical vapor deposition. (C) 1999 Elsevier Science S.A. All rights reserved.