GaAs AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique

Abstract

We report single-stage selective MOCVD grown GaAs/AlGaAs buried channel stripe lasers with effective optical and current confinement in directions both perpendicular and parallel to the p-n junction. Fundamental transverse mode lasing up to 5 mW/facet, typical threshold current of 60 mA, nearly single-longitudinal-mode operation at a wavelength of 890.2 nm at 8 mW and an external differential quantum efficiency of 16%/facet have been achieved for a 250 mu m long cavity under room-temperature CW operation. Maximum output power as high as 16.4 mW is obtained at 400 mA for a 800 mu m long cavity. A tuning rate of the wavelength to temperature is interpolated to be about 0.32 nm degrees C-1 and the characteristic temperature T-0 is measured to be 102 K in thr range of 25 to 65 degrees C for a 500 mu m long cavity.