Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition

Abstract

In order to explain the etching effect of the carbon tetrabromide in the Vertical growth of GaAs during metalorganic chemical vapor deposition. the dependence of the vertical growth rate of GaAs epilayer on the growth temperature and on the carbon tetrabromide mole fraction has been investigated. The vertical growth rate decreases with increasing growth temperature in the range of 600 similar to 700 degrees C, whereas it increases with increasing growth temperature in the range of 700 similar to 800 degrees C. The vertical growth rate, thus, shows the minimum value at the growth temperature of 700 degrees C. The high mole fraction of carbon tetrabromide causes a significant diminution of the vertical growth rate of GaAs epilayer; The decrement of the vertical growth rate is attributed to the increment of bromine atoms in the reactor with increasing the carbon tetrabromide mole fraction. The increment of bromine atoms causes the etching effect of carbon tetrabromide.