Optical studies on a series of AlAs/GaAs short period superlattices

Authors
Oh, MSChoi, SGKim, YDWoo, DHKoh, EHKim, SHKang, KNRhee, SJWoo, JC
Issue Date
1999-04
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.S54 - S57
Abstract
We present optical studies of a series of GaAs/AlAs short period superlattices (SLs) grown by Molecular Beam Epitaxy (MBE). The structural properties were examined by X-ray diffraction measurements. Quantum confinement of the electronic states was observed in the low temperature photoluminescence (PL). Spectroscopic ellipsometric (SE) measurements were also performed to determine energies of the interband transitions at room temperature. As n increases, we found that the lower transition energies (below 4.0 eV) decrease. The results are compared with low temperature photoluminescence measurements. We found a new structure at the lower E-2 peak, which demonstrates the best resolution of the E-2 structure in these SLs so far obtained by SE.
Keywords
GAAS/ALAS SUPERLATTICES; DIELECTRIC FUNCTION; SPECTROSCOPIC ELLIPSOMETRY; GAAS; TRANSITIONS; ALXGA1-XAS; SI; GE; GAAS/ALAS SUPERLATTICES; DIELECTRIC FUNCTION; SPECTROSCOPIC ELLIPSOMETRY; GAAS; TRANSITIONS; ALXGA1-XAS; SI; GE; superlattic
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/142299
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