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dc.contributor.author주병권-
dc.contributor.author정재훈-
dc.contributor.author김훈-
dc.contributor.author이윤희-
dc.contributor.author이남양-
dc.contributor.author오명환-
dc.date.accessioned2024-01-21T16:04:24Z-
dc.date.available2024-01-21T16:04:24Z-
dc.date.created2022-01-10-
dc.date.issued1999-01-
dc.identifier.issn0254-4172-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142481-
dc.publisher大韓電氣學會-
dc.titleInvestigation of physical properties of N-doped DLC film and its application to Mo-tip FEA devices-
dc.title.alternative질소가 도핑된 DLC 막의 물성 조사 및 Mo-tip FEA 소자에의 응용-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation전기학회논문지 = Transactions of the Korean Institute of Electrical Engneers, v.48C, no.1, pp.18 - 22-
dc.citation.title전기학회논문지 = Transactions of the Korean Institute of Electrical Engneers-
dc.citation.volume48C-
dc.citation.number1-
dc.citation.startPage18-
dc.citation.endPage22-
dc.subject.keywordAuthorFED-
dc.subject.keywordAuthorfield emission-
dc.subject.keywordAuthorMo-tip FEA-
dc.subject.keywordAuthorDLC coating-
dc.subject.keywordAuthorN-doping-
dc.subject.keywordAuthorlow-hydrogenated film-
dc.subject.keywordAuthortransconductance-
dc.subject.keywordAuthorelectrical conductivity-
dc.subject.keywordAuthoroptical band-gap-
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