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dc.contributor.authorLee, HN-
dc.contributor.authorChoh, SH-
dc.contributor.authorShin, DS-
dc.contributor.authorKim, YT-
dc.date.accessioned2024-01-21T16:11:52Z-
dc.date.available2024-01-21T16:11:52Z-
dc.date.created2021-09-03-
dc.date.issued1999-01-
dc.identifier.issn0015-0193-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142612-
dc.description.abstractWe have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100 degreesC for 5 min in a halogen lamp furnace. The SET thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SET films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SET films on the as-deposited and the 900 degreesC annealed CeO2 films were 1.9x10(-6) A/cm(2) and 6.1x10(-9)A/cm(2), respectively at -10 V.-
dc.languageEnglish-
dc.publisherGORDON BREACH SCI PUBL LTD-
dc.subjectCEO2-
dc.subjectSAPPHIRE-
dc.subjectSURFACE-
dc.subjectSILICON-
dc.subjectGROWTH-
dc.subjectLAYERS-
dc.subjectFILMS-
dc.titleCorrelation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationFERROELECTRICS, v.232, no.1-4, pp.1015 - 1020-
dc.citation.titleFERROELECTRICS-
dc.citation.volume232-
dc.citation.number1-4-
dc.citation.startPage1015-
dc.citation.endPage1020-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000165296900021-
dc.identifier.scopusid2-s2.0-6044251254-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusCEO2-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorferroelectric gate-
dc.subject.keywordAuthormorphology-
dc.subject.keywordAuthorSrBi2Ta2O9-
dc.subject.keywordAuthorCeO2-
dc.subject.keywordAuthorMFS-
dc.subject.keywordAuthorMFIS-
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