Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HN | - |
dc.contributor.author | Choh, SH | - |
dc.contributor.author | Shin, DS | - |
dc.contributor.author | Kim, YT | - |
dc.date.accessioned | 2024-01-21T16:11:52Z | - |
dc.date.available | 2024-01-21T16:11:52Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.issn | 0015-0193 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/142612 | - |
dc.description.abstract | We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100 degreesC for 5 min in a halogen lamp furnace. The SET thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SET films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SET films on the as-deposited and the 900 degreesC annealed CeO2 films were 1.9x10(-6) A/cm(2) and 6.1x10(-9)A/cm(2), respectively at -10 V. | - |
dc.language | English | - |
dc.publisher | GORDON BREACH SCI PUBL LTD | - |
dc.subject | CEO2 | - |
dc.subject | SAPPHIRE | - |
dc.subject | SURFACE | - |
dc.subject | SILICON | - |
dc.subject | GROWTH | - |
dc.subject | LAYERS | - |
dc.subject | FILMS | - |
dc.title | Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors | - |
dc.type | Article | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | FERROELECTRICS, v.232, no.1-4, pp.1015 - 1020 | - |
dc.citation.title | FERROELECTRICS | - |
dc.citation.volume | 232 | - |
dc.citation.number | 1-4 | - |
dc.citation.startPage | 1015 | - |
dc.citation.endPage | 1020 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000165296900021 | - |
dc.identifier.scopusid | 2-s2.0-6044251254 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | CEO2 | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | ferroelectric gate | - |
dc.subject.keywordAuthor | morphology | - |
dc.subject.keywordAuthor | SrBi2Ta2O9 | - |
dc.subject.keywordAuthor | CeO2 | - |
dc.subject.keywordAuthor | MFS | - |
dc.subject.keywordAuthor | MFIS | - |
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