Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, HK | - |
dc.contributor.author | Kim, TH | - |
dc.contributor.author | Moon, S | - |
dc.contributor.author | Jung, JH | - |
dc.contributor.author | Oh, MH | - |
dc.date.accessioned | 2024-01-21T16:12:26Z | - |
dc.date.available | 2024-01-21T16:12:26Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/142622 | - |
dc.description.abstract | The nitrogen-doped diamond-like-carbon (DLC) coating on the molybdenum field emitter arrays (Mo-FEAs) was reported to improve the electron emission characteristics. The plasma enhanced chemical vapor deposition method using a layer-by-layer technique was applied to deposit DLC films. Field emission characteristics were measured and the possibility of applying N-doped DLC coated emitters to high frequency vacuum devices was reported. The turn-on voltage of DLC coated FEAs was decreased from 75 to 55 V and the emission current was more stable than that of noncoated FEAs. The total transconductance of FEAs was increased and the effective work function of emitters was reduced by the N-type DLC coating. (C) 1999 American Vacuum Society. [S0734-211X(99)02101-0]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ARRAY DEVELOPMENT | - |
dc.subject | PLASMA | - |
dc.subject | FILM | - |
dc.subject | STABILITY | - |
dc.title | Enhancement of emission characteristics for field emitters by N-doped hydrogen-free diamond-like-carbon coating | - |
dc.type | Article | - |
dc.identifier.doi | 10.1116/1.590507 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.17, no.1, pp.246 - 249 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 17 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 246 | - |
dc.citation.endPage | 249 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000078654300043 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ARRAY DEVELOPMENT | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | enhancement | - |
dc.subject.keywordAuthor | field emission | - |
dc.subject.keywordAuthor | hydrogen-free | - |
dc.subject.keywordAuthor | DLC | - |
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