Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Plokhikh, A.A. | - |
dc.contributor.author | Kim, C.-D. | - |
dc.contributor.author | Joo, G.-T. | - |
dc.contributor.author | Route, R.K. | - |
dc.contributor.author | Feigelson, R.S. | - |
dc.date.accessioned | 2024-01-21T16:31:56Z | - |
dc.date.available | 2024-01-21T16:31:56Z | - |
dc.date.created | 2021-09-02 | - |
dc.date.issued | 1998-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/142720 | - |
dc.description.abstract | Domain structure of β-BaB2O4 (BBO) crystals were determined by chemical etching. It was found that crystals grown by the direct Czochralski method show mostly single-domain. Pyroelectric and piezoelectric properties of BBO were studied. Pyroelectric coefficient of BBO has positive sign and the value of the coefficient is p = (1.27 ± 0.08) × 10-5 C/m2K. Piezoelectric strain coefficients were: d33 = 0.15 × 10-11 C/N, d22 = 0.22 × 10-11 C/N and d31 = 0.049 × 10-11 C/N. Electrical conductivity of BBO was measured as a function of temperature in range 340-720°C. Arrhenius activation energy was 1.68 eV. | - |
dc.language | English | - |
dc.title | Domain structure and electrical properties of β-BaB2O4 single crystals grown by direct czochralski method | - |
dc.type | Article | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.32, no.3 SUPPL., pp.S1231 - S1233 | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 32 | - |
dc.citation.number | 3 SUPPL. | - |
dc.citation.startPage | S1231 | - |
dc.citation.endPage | S1233 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.scopusid | 2-s2.0-19944387009 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | β-BaB2O4 | - |
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