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dc.contributor.authorJu, BK-
dc.contributor.authorChoi, WB-
dc.contributor.authorLee, YH-
dc.contributor.authorJung, SJ-
dc.contributor.authorLee, NY-
dc.contributor.authorHan, JI-
dc.contributor.authorCho, KI-
dc.contributor.authorOh, MH-
dc.date.accessioned2024-01-21T16:36:07Z-
dc.date.available2024-01-21T16:36:07Z-
dc.date.created2021-09-03-
dc.date.issued1998-11-
dc.identifier.issn0026-2692-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142792-
dc.description.abstractTwo ITO-coated glass wafers (Corning #7740, #0080) are successfully bonded by the typical Si-Pyrex electrostatic bonding mechanism. Both Si=#7740 and Ti-(Li-doped SiO2) interlayer systems can be employed for the electrostatic bonding of #7059-#7059 and #0080-#0080 glass wafer pairs. This glass-to-glass electrostatic bonding process can be applied to the clean and tubeless packaging of field emission display panels. (C) 1998 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER ADVANCED TECHNOLOGY-
dc.titleGlass-to-glass electrostatic bonding for FED tubeless packaging application-
dc.typeArticle-
dc.identifier.doi10.1016/S0026-2692(97)00119-5-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONICS JOURNAL, v.29, no.11, pp.839 - 844-
dc.citation.titleMICROELECTRONICS JOURNAL-
dc.citation.volume29-
dc.citation.number11-
dc.citation.startPage839-
dc.citation.endPage844-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000075348100012-
dc.identifier.scopusid2-s2.0-0032209966-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorMEMS-
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