DSpace at KIST: Kinetics of chemical vapor deposition of silicon on Ni substrate from a gas mixture of SiCl4 and H2

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DC Field	Value	Language
dc.contributor.author	윤진국	-
dc.contributor.author	유재은	-
dc.contributor.author	맹선재	-
dc.contributor.author	정병성	-
dc.contributor.author	김재수	-
dc.contributor.author	최종술	-
dc.date.accessioned	2024-01-21T16:37:01Z	-
dc.date.available	2024-01-21T16:37:01Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1998-10	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/142807	-
dc.publisher	대한금속학회	-
dc.title	Kinetics of chemical vapor deposition of silicon on Ni substrate from a gas mixture of SiCl4 and H2	-
dc.title.alternative	SiCl4-H2 반응가스에 의한 Ni 기판위에서 Si의 화학증착속도론	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	대한금속학회지, v.36, no.10, pp.1655 - 1662	-
dc.citation.title	대한금속학회지	-
dc.citation.volume	36	-
dc.citation.number	10	-
dc.citation.startPage	1655	-
dc.citation.endPage	1662	-
dc.subject.keywordAuthor	kinetics	-

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