Characteristics of ZnS : Mn thin film electroluminescent device using layered BaTiO3 thin film structures
- Authors
 - Song, MH; Lee, YH; Hahn, TS; Oh, MH; Yoon, KH
 
- Issue Date
 - 1998-09
 
- Publisher
 - PERGAMON-ELSEVIER SCIENCE LTD
 
- Citation
 - SOLID-STATE ELECTRONICS, v.42, no.9, pp.1711 - 1717
 
- Abstract
 - A multilayered and a double-layered BaTiO3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of similar to 50 V and a high saturated brightness of similar to 3000 cd m(-2). (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
 
- Keywords
 - ZnS:Mn; TFELD; layered BaTiO3 structure; electroluminescent devices
 
- ISSN
 - 0038-1101
 
- URI
 - https://pubs.kist.re.kr/handle/201004/142898
 
- DOI
 - 10.1016/S0038-1101(98)00129-4
 
- Appears in Collections:
 - KIST Article > Others
 
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