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dc.contributor.authorYoon, TH-
dc.contributor.authorShin, DS-
dc.contributor.authorKim, DB-
dc.contributor.authorKim, JC-
dc.contributor.authorKim, SH-
dc.date.accessioned2024-01-21T16:44:35Z-
dc.date.available2024-01-21T16:44:35Z-
dc.date.created2021-09-03-
dc.date.issued1998-08-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142937-
dc.description.abstractWe have shown theoretically that a semiconductor etalon exhibits optically bistable behavior at a lower input light intensity when the two mirrors as well as the spacer layer are nonlinear.-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.titleOptical bistability in a semiconductor etalon with nonlinear integrated mirrors-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.37.4397-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.8, pp.4397 - 4400-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume37-
dc.citation.number8-
dc.citation.startPage4397-
dc.citation.endPage4400-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000076313100034-
dc.identifier.scopusid2-s2.0-0032131024-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthoroptical bistability-
dc.subject.keywordAuthornonlinear etalon-
dc.subject.keywordAuthorsemiconductor etalon-
dc.subject.keywordAuthornonlinear layered structure-
dc.subject.keywordAuthorquarter-wave mirror-
dc.subject.keywordAuthorcharacteristic matrix method-
dc.subject.keywordAuthorfixed-point iteration-
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