Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory

Abstract

Memory window and leakage current density of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO2 insulator between SrBi2Ta2O9 and SiO2 and thus the memory window also increases with an electric field to the SrBi2Ta2O9. A typical value of memory window for PT/SrBi2Ta2O9 (140 nm)/CeO2/SiO2/Si is in the range of 0.5 - 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 - 9 V. The leakage current density is remained at 3 x 10(-8) A/cm(2) until the applied voltage increases up to 10 V.