Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations

Abstract

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)(n)S) and p-blocking on n-substrate (VINS) have been fabricated and characterized, The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mn, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/degrees C, Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here.