Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김홍석 | - |
dc.contributor.author | 최인훈 | - |
dc.contributor.author | 은광용 | - |
dc.contributor.author | 백영준 | - |
dc.date.accessioned | 2024-01-21T17:14:55Z | - |
dc.date.available | 2024-01-21T17:14:55Z | - |
dc.date.created | 2022-01-10 | - |
dc.date.issued | 1998-03 | - |
dc.identifier.issn | 1229-7801 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/143216 | - |
dc.publisher | 한국세라믹학회 | - |
dc.title | Formation of SiC layer on single crystal Si using hot-filament reactor | - |
dc.type | Article | - |
dc.description.journalClass | 2 | - |
dc.identifier.bibliographicCitation | 한국세라믹학회지 = Journal of the Korean Ceramic Society, v.4, no.1, pp.25 - 27 | - |
dc.citation.title | 한국세라믹학회지 = Journal of the Korean Ceramic Society | - |
dc.citation.volume | 4 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 25 | - |
dc.citation.endPage | 27 | - |
dc.subject.keywordAuthor | SiC | - |
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