Full metadata record

DC Field Value Language
dc.contributor.author김홍석-
dc.contributor.author최인훈-
dc.contributor.author은광용-
dc.contributor.author백영준-
dc.date.accessioned2024-01-21T17:14:55Z-
dc.date.available2024-01-21T17:14:55Z-
dc.date.created2022-01-10-
dc.date.issued1998-03-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143216-
dc.publisher한국세라믹학회-
dc.titleFormation of SiC layer on single crystal Si using hot-filament reactor-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국세라믹학회지 = Journal of the Korean Ceramic Society, v.4, no.1, pp.25 - 27-
dc.citation.title한국세라믹학회지 = Journal of the Korean Ceramic Society-
dc.citation.volume4-
dc.citation.number1-
dc.citation.startPage25-
dc.citation.endPage27-
dc.subject.keywordAuthorSiC-
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE