Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure

Abstract

For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties.