DSpace at KIST: RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices

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DC Field	Value	Language
dc.contributor.author	이창우	-
dc.contributor.author	고민경	-
dc.contributor.author	오환원	-
dc.contributor.author	우상록	-
dc.contributor.author	윤성로	-
dc.contributor.author	김용태	-
dc.contributor.author	박영균	-
dc.contributor.author	고석중	-
dc.date.accessioned	2024-01-21T17:38:19Z	-
dc.date.available	2024-01-21T17:38:19Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1998-01	-
dc.identifier.issn	1225-0562	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143373	-
dc.title	RF power dependence of stresses in plasma deposited low resistive tungsten films for VLSI devices	-
dc.title.alternative	고집적 소자에 적용되는 저저항 텅스텐 박막에서 응력의 RF power의존성	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국재료학회지 = Korean Journal of Materials Research, v.8, no.11, pp.977 - 981	-
dc.citation.title	한국재료학회지 = Korean Journal of Materials Research	-
dc.citation.volume	8	-
dc.citation.number	11	-
dc.citation.startPage	977	-
dc.citation.endPage	981	-
dc.subject.keywordAuthor	diffusion barrier	-
dc.subject.keywordAuthor	tungsten	-
dc.subject.keywordAuthor	VLSI	-
dc.subject.keywordAuthor	PECVD	-
dc.subject.keywordAuthor	stress	-

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