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dc.contributor.authorYom, SS-
dc.date.accessioned2024-01-21T17:40:23Z-
dc.date.available2024-01-21T17:40:23Z-
dc.date.created2021-09-05-
dc.date.issued1998-01-
dc.identifier.issn1058-4587-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143409-
dc.description.abstractThin films of ferroelectric materials of PbTiO3, Pb(Zr, Ti)O-3, BaTiO3 and TiO2-x were prepared by metalorganic chemical vapor deposition (MOCVD) on various substrates of SrTiO3, fused silica glass, p-Si, p-InSb, n-InP, p-GaAs, indium tin oxide-coated soda lime glass, Pt/Ti/SiO2/Si, RuO2/SiO2/Si and Pt/RuO2/SiO2/Si substrates. Low temperature growth at substrate temperature below 500 degreesC of dielectric/ferroelectric thin films via in-situ MOCVD process was carried out to study structural and electrical properties.-
dc.languageEnglish-
dc.publisherGORDON BREACH PUBLISHING, TAYLOR & FRANCIS GROUP-
dc.titleLow temperature growth of oxide thin films by metalorganic chemical vapor deposition-
dc.typeArticle-
dc.identifier.doi10.1080/10584589808238765-
dc.description.journalClass1-
dc.identifier.bibliographicCitationINTEGRATED FERROELECTRICS, v.20, no.1-4, pp.55 - 64-
dc.citation.titleINTEGRATED FERROELECTRICS-
dc.citation.volume20-
dc.citation.number1-4-
dc.citation.startPage55-
dc.citation.endPage64-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000168669700005-
dc.identifier.scopusid2-s2.0-0032321085-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorthin films-
dc.subject.keywordAuthoroxide materials-
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