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dc.contributor.authorKim, DJ-
dc.contributor.authorKim, YT-
dc.contributor.authorPark, JW-
dc.date.accessioned2024-01-21T17:46:03Z-
dc.date.available2024-01-21T17:46:03Z-
dc.date.created2021-09-05-
dc.date.issued1997-11-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143506-
dc.description.abstractDiffusion barrier properties of nanostructured amorphous Ta-Si-N thin films with different N concentrations have been investigated in metallurgical aspects of Cu metallization. When the N content exceeds 40 at. %, the Ta-Si-N film remains in the nanostructure phase even after annealing at 1100 degrees C for 1 h and effectively prevents Cu diffusion after annealing at 900 degrees C for 30 min. The reason for the excellent thermal stability is that excess N atoms disturb the grain growth of TaSi2 phase and keep the Ta-Si-N film in the nanostructure phase during the high temperature annealing. The Ta-Si-N film with N content less than 40 at. % fails to prevent the Cu diffusion after annealing at 700 degrees C for 30 min. (C) 1997 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectDEPOSITED TUNGSTEN-
dc.titleNanostructured Ta-Si-N diffusion barriers for Cu metallization-
dc.typeArticle-
dc.identifier.doi10.1063/1.366346-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.82, no.10, pp.4847 - 4851-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume82-
dc.citation.number10-
dc.citation.startPage4847-
dc.citation.endPage4851-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1997YG47300022-
dc.identifier.scopusid2-s2.0-0041996796-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusDEPOSITED TUNGSTEN-
dc.subject.keywordAuthornanostructure-
dc.subject.keywordAuthorTa-Si-N-
dc.subject.keywordAuthordiffusion barrier-
dc.subject.keywordAuthorCu metallization-
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