Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, DJ | - |
dc.contributor.author | Kim, YT | - |
dc.contributor.author | Park, JW | - |
dc.date.accessioned | 2024-01-21T17:46:03Z | - |
dc.date.available | 2024-01-21T17:46:03Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 1997-11-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/143506 | - |
dc.description.abstract | Diffusion barrier properties of nanostructured amorphous Ta-Si-N thin films with different N concentrations have been investigated in metallurgical aspects of Cu metallization. When the N content exceeds 40 at. %, the Ta-Si-N film remains in the nanostructure phase even after annealing at 1100 degrees C for 1 h and effectively prevents Cu diffusion after annealing at 900 degrees C for 30 min. The reason for the excellent thermal stability is that excess N atoms disturb the grain growth of TaSi2 phase and keep the Ta-Si-N film in the nanostructure phase during the high temperature annealing. The Ta-Si-N film with N content less than 40 at. % fails to prevent the Cu diffusion after annealing at 700 degrees C for 30 min. (C) 1997 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DEPOSITED TUNGSTEN | - |
dc.title | Nanostructured Ta-Si-N diffusion barriers for Cu metallization | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.366346 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.82, no.10, pp.4847 - 4851 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 82 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 4847 | - |
dc.citation.endPage | 4851 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | A1997YG47300022 | - |
dc.identifier.scopusid | 2-s2.0-0041996796 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | DEPOSITED TUNGSTEN | - |
dc.subject.keywordAuthor | nanostructure | - |
dc.subject.keywordAuthor | Ta-Si-N | - |
dc.subject.keywordAuthor | diffusion barrier | - |
dc.subject.keywordAuthor | Cu metallization | - |
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