DSpace at KIST: Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy

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DC Field	Value	Language
dc.contributor.author	이정욱	-
dc.contributor.author	유지범	-
dc.contributor.author	양형국	-
dc.contributor.author	박종철	-
dc.contributor.author	변동진	-
dc.contributor.author	금동화	-
dc.date.accessioned	2024-01-21T18:05:07Z	-
dc.date.available	2024-01-21T18:05:07Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1997-09	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143601	-
dc.title	Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy	-
dc.title.alternative	ZnO 완충층을 이용한 sapphire 기판위에 hydride vapor phase epitaxy에 의한 후막 GaN의 성장특성	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	응용물리 = Ungyong Mulli (The Korean physical society)., v.10, no.5, pp.458 - 462	-
dc.citation.title	응용물리 = Ungyong Mulli (The Korean physical society).	-
dc.citation.volume	10	-
dc.citation.number	5	-
dc.citation.startPage	458	-
dc.citation.endPage	462	-
dc.subject.keywordAuthor	GaN film	-
dc.subject.keywordAuthor	hydride vapor phase epitaxial growth	-
dc.subject.keywordAuthor	ZnO buffer layer	-

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