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dc.contributor.author김효배-
dc.contributor.author조만호-
dc.contributor.author황보상우-
dc.contributor.author최성창-
dc.contributor.author최원국-
dc.contributor.author오정아-
dc.contributor.author송종한-
dc.contributor.author황정남-
dc.date.accessioned2024-01-21T18:08:26Z-
dc.date.available2024-01-21T18:08:26Z-
dc.date.created2022-01-10-
dc.date.issued1997-08-
dc.identifier.issn1225-8822-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143657-
dc.languageKorean-
dc.publisher한국진공학회-
dc.title실리콘 기판 위에 UHV-ICB 증착법으로 적층 성장된 Y2O3 박막의 BS/channeling 연구-
dc.title.alternativeBS/channeling studies on the heteroepitaxially grown Y2O3 films on Si substrates by UHV-ICB deposition-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국진공학회지, v.6, no.3, pp.235 - 241-
dc.citation.title한국진공학회지-
dc.citation.volume6-
dc.citation.number3-
dc.citation.startPage235-
dc.citation.endPage241-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthorbackscattering-
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