Effect of substrate surfaces and heat treatments on adhesion of Cu films

Abstract

The adhesion characteristics of Cu films grown on Si and TiN substrates by PECVD were studied. Cu(etac)(2) was used as metalorganic precursor. The adhesion strength of Cu films was measured by the peel test in accordance with ASTM B 571-91. The adhesion strength of Cu films before 450 degrees C treatment was 13-27 kg(f)/cm. The oxidation of substrates before deposition showed a negative effect on the adhesion of Cu films. The adhesion was substantially improved by thermal treatment at 450 degrees C. The adhesion improvement by 450 degrees C treatment was mainly attributed to the removal of tensile residual stress in Cu films.