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dc.contributor.authorKang, M.-
dc.contributor.authorKim, J.-
dc.contributor.authorLim, T.-
dc.contributor.authorOh, I.-
dc.contributor.authorJeon, B.-
dc.contributor.authorJung, I.-
dc.contributor.authorAn, C.-
dc.date.accessioned2024-01-21T18:10:31Z-
dc.date.available2024-01-21T18:10:31Z-
dc.date.created2021-09-02-
dc.date.issued1997-08-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143693-
dc.description.abstractThe relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; photoconductivity increased and optical band gap, full width at half maximum and the ratio of the concentration of dihydride to that of monohydride decreased. The high deposition rate was a very important factor to obtain high quality amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4.-
dc.languageEnglish-
dc.publisherJapan Society of Applied Physics-
dc.subjectAmorphous films-
dc.subjectAmorphous silicon-
dc.subjectChemical vapor deposition-
dc.subjectElectron cyclotron resonance-
dc.subjectEnergy gap-
dc.subjectFilm growth-
dc.subjectHydrogenation-
dc.subjectPhotoconductivity-
dc.subjectPlasma applications-
dc.subjectSemiconducting silicon-
dc.subjectSemiconductor growth-
dc.subjectSilanes-
dc.subjectFull width at half maximum (FWHM)-
dc.subjectSemiconducting films-
dc.titleA study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4-
dc.typeArticle-
dc.identifier.doi10.1143/jjap.36.l986-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJapanese Journal of Applied Physics, Part 2: Letters, v.36, no.8 PART A, pp.L986 - L988-
dc.citation.titleJapanese Journal of Applied Physics, Part 2: Letters-
dc.citation.volume36-
dc.citation.number8 PART A-
dc.citation.startPageL986-
dc.citation.endPageL988-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-0031198015-
dc.type.docTypeArticle-
dc.subject.keywordPlusAmorphous films-
dc.subject.keywordPlusAmorphous silicon-
dc.subject.keywordPlusChemical vapor deposition-
dc.subject.keywordPlusElectron cyclotron resonance-
dc.subject.keywordPlusEnergy gap-
dc.subject.keywordPlusFilm growth-
dc.subject.keywordPlusHydrogenation-
dc.subject.keywordPlusPhotoconductivity-
dc.subject.keywordPlusPlasma applications-
dc.subject.keywordPlusSemiconducting silicon-
dc.subject.keywordPlusSemiconductor growth-
dc.subject.keywordPlusSilanes-
dc.subject.keywordPlusFull width at half maximum (FWHM)-
dc.subject.keywordPlusSemiconducting films-
dc.subject.keywordAuthorElectron cyclotron resonance plasma chemical vapor deposition-
dc.subject.keywordAuthorHydrogenated amorphous silicon-
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