DSpace at KIST: Characteristics of silicon oxide films prepared by chemical vapor deposition using ECR plasma source

Full metadata record

DC Field	Value	Language
dc.contributor.author	오인환	-
dc.contributor.author	전법주	-
dc.contributor.author	임태훈	-
dc.contributor.author	정일현	-
dc.date.accessioned	2024-01-21T18:11:24Z	-
dc.date.available	2024-01-21T18:11:24Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1997-07	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/143707	-
dc.title	Characteristics of silicon oxide films prepared by chemical vapor deposition using ECR plasma source	-
dc.title.alternative	ECR 플라즈마를 이용한 화학증착법에 의해 제조된 실리콘 산화막의 특성	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	화학공학 = Journal of the Korean institute of chemical engineers, v.35, no.3, pp.374 - 379	-
dc.citation.title	화학공학 = Journal of the Korean institute of chemical engineers	-
dc.citation.volume	35	-
dc.citation.number	3	-
dc.citation.startPage	374	-
dc.citation.endPage	379	-
dc.subject.keywordAuthor	electron cyclotron resonance	-
dc.subject.keywordAuthor	chemical vapor deposition	-
dc.subject.keywordAuthor	microwave power	-

Show Simple Item Record

KIST Library Institutional Repository