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dc.contributor.authorPark, YJ-
dc.contributor.authorKim, EK-
dc.contributor.authorMin, SK-
dc.contributor.authorPark, IW-
dc.contributor.authorYeom, TH-
dc.contributor.authorMunekata, H-
dc.contributor.authorKukimoto, H-
dc.date.accessioned2024-01-21T18:13:49Z-
dc.date.available2024-01-21T18:13:49Z-
dc.date.created2022-01-11-
dc.date.issued1997-06-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143748-
dc.description.abstractFour Mn-related EPR centers have been observed in p-type Mn-doped VGF-grown GaAs samples at 4 K. Particularly, a well defined Mn-Mn center at g=2.90 without any disturbance caused by the Mn-0 center could be obtained at 20 K. The observed EPR centers of the Mn-Oa, center at g=2.00, the Mn-Mn at g=2.90, and the Mn-0 at g=5.83 and 2.82 almost disappeared after the thermal treatment and quenching processes at 850 degrees C for 10 min. These thermal behaviors seem to be closely related with the out-diffusion of Ga,, impurity segregation, and the change of the internal stress, respectively. Evidence for the existence of Mn-0 state acting as a charge compensation center in GaAs:Mn is also presented.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectGALLIUM-ARSENIDE-
dc.subjectMANGANESE-
dc.titleCharacterization of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S113 - S116-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume30-
dc.citation.startPageS113-
dc.citation.endPageS116-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1997XJ37500022-
dc.identifier.scopusid2-s2.0-0031479150-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusGALLIUM-ARSENIDE-
dc.subject.keywordPlusMANGANESE-
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