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dc.contributor.author전법주-
dc.contributor.author오인환-
dc.contributor.author임태훈-
dc.contributor.author정일현-
dc.date.accessioned2024-01-21T18:14:27Z-
dc.date.available2024-01-21T18:14:27Z-
dc.date.created2022-01-10-
dc.date.issued1997-06-
dc.identifier.issn1225-0112-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143759-
dc.publisher한국공업화학회-
dc.titleEffects on the oxidation rate with silicon orientation and its surface morphology-
dc.title.alternative실리콘배향에 따른 산화 속도 영향과 표면 Morphology-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitationJournal of the Korean Industrial and Engineering Chemistry = 공업화학, v.8, no.3, pp.395 - 402-
dc.citation.titleJournal of the Korean Industrial and Engineering Chemistry = 공업화학-
dc.citation.volume8-
dc.citation.number3-
dc.citation.startPage395-
dc.citation.endPage402-
dc.subject.keywordAuthorECRCVD-
dc.subject.keywordAuthora-Si:H-
dc.subject.keywordAuthorsilicon orientation-
dc.subject.keywordAuthorsurface morphology-
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