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dc.contributor.authorLee, JK-
dc.contributor.authorSong, TK-
dc.contributor.authorKim, TS-
dc.contributor.authorJung, HJ-
dc.date.accessioned2024-01-21T18:42:05Z-
dc.date.available2024-01-21T18:42:05Z-
dc.date.created2022-01-11-
dc.date.issued1997-01-
dc.identifier.issn1058-4587-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/143998-
dc.description.abstractCrystal orientation of the SrBi2Ta2O9, CaBi2Ta2O9 thin films were controlled by the r.f. sputtering pressure. The Pt/SBTO/Pt capacitor having a c-axis oriented films shows P*r-P boolean AND r=16.3 mu C/cm(2) and Ec=50kV/cm which is superior than the films showing polycrystalline structure. The surface morphologies of the SrBi2Ta2O9 thin films show two kinds of grains which was changed by the sputtering conditions.-
dc.languageEnglish-
dc.publisherGORDON BREACH SCI PUBL LTD-
dc.subjectCAPACITORS-
dc.subjectELECTRODES-
dc.subjectFATIGUE-
dc.titleCrystal orientation dependencies on the ferroelectric properties of SrBi2Ta2O9, CaBi2Ta2O9 thin films fabricated by the rf magnetron sputtering technique-
dc.typeArticle-
dc.identifier.doi10.1080/10584589708221713-
dc.description.journalClass1-
dc.identifier.bibliographicCitationINTEGRATED FERROELECTRICS, v.18, no.1-4, pp.369 - 376-
dc.citation.titleINTEGRATED FERROELECTRICS-
dc.citation.volume18-
dc.citation.number1-4-
dc.citation.startPage369-
dc.citation.endPage376-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1997YG17500034-
dc.identifier.scopusid2-s2.0-0031332587-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusCAPACITORS-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusFATIGUE-
dc.subject.keywordAuthorferroelectric-
dc.subject.keywordAuthorSrBi2Ta2O9-
dc.subject.keywordAuthorCaBi2Ta2O9-
dc.subject.keywordAuthorrf sputtering-
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