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dc.contributor.authorPark, YJ-
dc.contributor.authorYeom, TH-
dc.contributor.authorPark, IW-
dc.contributor.authorChoh, SH-
dc.contributor.authorMin, SK-
dc.date.accessioned2024-01-21T19:05:52Z-
dc.date.available2024-01-21T19:05:52Z-
dc.date.created2021-09-04-
dc.date.issued1997-01-
dc.identifier.issn0038-1098-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144172-
dc.description.abstractThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped with Cr and In (VGF-GaAs:Cr,In). Cr2+ EPR signals are observed in both samples of semi-insulating and semiconducting GaAs: Cr,In single crystals, whereas Cr3+ EPR signals can be observed only in semi-insulating samples. The semi-insulating properties become obvious when increasing the intensity of Cr3+ and Cr2+ EPR signals in VGF-GaAs:Cr,In crystals. Isolated Cr-Ga(3+) ions play an important role in GaAs as a charge compensation center for obtaining semi-insulating property. Copyright (C) 1996 Elsevier Science Ltd-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectBULK GAAS-
dc.titleCompensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property-
dc.typeArticle-
dc.identifier.doi10.1016/S0038-1098(96)00586-8-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID STATE COMMUNICATIONS, v.101, no.4, pp.219 - 223-
dc.citation.titleSOLID STATE COMMUNICATIONS-
dc.citation.volume101-
dc.citation.number4-
dc.citation.startPage219-
dc.citation.endPage223-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1997WA27400002-
dc.identifier.scopusid2-s2.0-0030735774-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusBULK GAAS-
dc.subject.keywordAuthorsemiconductors-
dc.subject.keywordAuthorcrystal growth-
dc.subject.keywordAuthorimpurities in semiconductors-
dc.subject.keywordAuthorelectronic states-
dc.subject.keywordAuthorelectron paramagnetic resonance-
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