Domain structure of epitaxial PZT thin films grown on MgO(001) by RF magnetron sputtering

Authors
Lee, KSKang, YMBaik, S
Issue Date
1997-01
Publisher
GORDON BREACH SCI PUBL LTD
Citation
INTEGRATED FERROELECTRICS, v.14, no.1-4, pp.43 - 49
Abstract
Epitaxial Pb(ZrxTi1-x)O-3 (x=0.0 similar to 0.32) thin-films were successfully grown on MgO(001) single crystal by RF magnetron sputtering. Lattice constants and crystal quality of the films were measured by the X-ray theta-2 theta scan and the FWHM of (001) rocking curves, respectively. Degree of c axis orientation and crystal quality of the films improved gradually with increasing Zr concentration. High temperature X-ray technique was employed to study the domain formation as a function of temperature during cooling from cubic phase to tetragonal phase. The initial values of a at the Curie temperature also increased with increasing Zr concentration.
Keywords
STRAIN RELAXATION; DEPOSITION; MGO(100); STRAIN RELAXATION; DEPOSITION; MGO(100); Domain Structure; Epitaxy; PZT; X-ray diffraction
ISSN
1058-4587
URI
https://pubs.kist.re.kr/handle/201004/144182
DOI
10.1080/10584589708019975
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KIST Article > Others
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