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dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author김무성-
dc.contributor.author황성우-
dc.contributor.author김태근-
dc.contributor.author한철구-
dc.contributor.author박정호-
dc.contributor.authorY. S. Yu-
dc.contributor.authorW. I. Ha-
dc.date.accessioned2024-01-21T19:12:12Z-
dc.date.available2024-01-21T19:12:12Z-
dc.date.created2022-01-10-
dc.date.issued1996-10-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144278-
dc.titleFabrication and characterization modulation-doped-field-effect-transistors with antidot-patterned passivation layers.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationApplied physics lett., v.v. 69, no.no. 13, pp.1924 - 1926-
dc.citation.titleApplied physics lett.-
dc.citation.volumev. 69-
dc.citation.numberno. 13-
dc.citation.startPage1924-
dc.citation.endPage1926-
dc.subject.keywordAuthormodulation-doped-field-effect-transistors (MODFET)-
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