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Fabrication and characterization modulation-doped-field-effect-transistors with antidot-patterned passivation layers.

Authors

김은규; 민석기; 김무성; 황성우; 김태근; 한철구; 박정호; Y. S. Yu; W. I. Ha

Issue Date

1996-10

Citation

Applied physics lett., v.v. 69, no.no. 13, pp.1924 - 1926

Keywords

modulation-doped-field-effect-transistors (MODFET)

URI

https://pubs.kist.re.kr/handle/201004/144278

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KIST Article > Others

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