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dc.contributor.authorBae, SY-
dc.contributor.authorWang, SX-
dc.date.accessioned2024-01-21T19:32:34Z-
dc.date.available2024-01-21T19:32:34Z-
dc.date.created2021-09-01-
dc.date.issued1996-07-01-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144391-
dc.description.abstractThe successful sol-gel growth of colossal magnetoresistive La-Ca-Mn-O powder and epitaxial thin film is reported. Homogeneous powders were prepared at a temperature of 315 degrees C and epitaxial thin films were obtained on MgO(100) and LaAlO3(100) through heat treatment at 700-950 degrees C. A transition from semiconductor (negative d rho/dT) to metal (positive d rho/dT) was observed at 225 K, which was located in proximity to the magnetic transition temperature (T-c) of 228 K. A peak magnetoresistance ratio of similar to 900% occurred at 220 K. (C) 1996 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleSol-gel epitaxial growth of La1-xCaxMnO3 with colossal magnetoresistance effect-
dc.typeArticle-
dc.identifier.doi10.1063/1.118095-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.69, no.1, pp.121 - 123-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume69-
dc.citation.number1-
dc.citation.startPage121-
dc.citation.endPage123-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1996UU59000041-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorsol-gel-
dc.subject.keywordAuthorcolossal-
dc.subject.keywordAuthormagnetoresistance-
dc.subject.keywordAuthorepitaxy-
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