Ohmic 층으로서 HgSe/GaAs의 성장 조건 및 HgSe/p-ZnSe/GaAs 구조의 전기적 특성

Authors
김제원최인훈김진상서상희
Issue Date
1996-07
Citation
응용물리 = Ungyoung Mulli (The Korean Physical Society), v.9, no.4, pp.513 - 517
Keywords
HgSe/GaAs; HgSe/p-ZnSe/GaAs; 전기적 특성
URI
https://pubs.kist.re.kr/handle/201004/144401
Appears in Collections:
KIST Article > Others
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