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dc.contributor.author손창식-
dc.contributor.author김성일-
dc.contributor.author민병돈-
dc.contributor.author김태근-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-21T19:36:06Z-
dc.date.available2024-01-21T19:36:06Z-
dc.date.created2022-01-10-
dc.date.issued1996-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144451-
dc.title고농도로 탄소도핑된 InGaAs 에피층의 전기적성질에 대한 급속열처리효과-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.3, pp.368 - 371-
dc.citation.title응용물리 = Ungyong Mulli (The Korean physical society)-
dc.citation.volume9-
dc.citation.number3-
dc.citation.startPage368-
dc.citation.endPage371-
dc.subject.keywordAuthorcarbondoping-
dc.subject.keywordAuthorInGaAs-
dc.subject.keywordAuthorrapid thermal annealing-
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