DSpace at KISTKIST ArticleOthers

Full metadata record

DC Field Value Language
dc.contributor.author민병돈-
dc.contributor.author황성민-
dc.contributor.author손창식-
dc.contributor.author김성일-
dc.contributor.author김무성-
dc.contributor.author김은규-
dc.contributor.author민석기-
dc.contributor.author박만장-
dc.date.accessioned2024-01-21T19:36:25Z-
dc.date.available2024-01-21T19:36:25Z-
dc.date.created2022-01-10-
dc.date.issued1996-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144456-
dc.title여러가지 기판방향에서 MOCVD 방법으로 성장한 GaAs 에피층의 탄소 도핑 특성-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리 = Ungyong Mulli (The Korean physical society), v.9, no.3, pp.372 - 376-
dc.citation.title응용물리 = Ungyong Mulli (The Korean physical society)-
dc.citation.volume9-
dc.citation.number3-
dc.citation.startPage372-
dc.citation.endPage376-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorGaAs epi-layer-
dc.subject.keywordAuthorcarbon doping-
dc.subject.keywordAuthorsubstrate orientation-
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE