DSpace at KIST: Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge//0//.//1//2Si//0//.//8//8 grown on Si(100).

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DC Field	Value	Language
dc.contributor.author	송종한	-
dc.contributor.author	D. Y. C. Lie	-
dc.contributor.author	N. D. Theodore	-
dc.date.accessioned	2024-01-21T19:41:22Z	-
dc.date.available	2024-01-21T19:41:22Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-02	-
dc.identifier.issn	0169-4332	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144541	-
dc.publisher	Elsevier BV	-
dc.title	Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge//0//.//1//2Si//0//.//8//8 grown on Si(100).	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Applied Surface Science, v.v. 92, pp.557 - 565	-
dc.citation.title	Applied Surface Science	-
dc.citation.volume	v. 92	-
dc.citation.startPage	557	-
dc.citation.endPage	565	-
dc.description.isOpenAccess	N	-

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