Lateral growth rate enhancement on patterned GaAs substrate in [001] direction with CCl//4 by MOCVD.

Authors
김성일민석기황성민김은규민병돈이민석맹선재
Issue Date
1996-01
Citation
Bulletin of the Korean physical society, v.v. 14, no.no. 1, pp.239 - ?
Keywords
MOCVD
URI
https://pubs.kist.re.kr/handle/201004/144724
Appears in Collections:
KIST Article > Others
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