DSpace at KIST: Strain evolution and dopant activation in P-implanted metastable pseudomorphic Si(100)/Ge//0//.//1//2Si//0//.//8//8.

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DC Field	Value	Language
dc.contributor.author	송종한	-
dc.contributor.author	D. Y. C. Lie	-
dc.contributor.author	F. Eisen	-
dc.contributor.author	M. A. Nicolet	-
dc.date.accessioned	2024-01-21T20:06:01Z	-
dc.date.available	2024-01-21T20:06:01Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144728	-
dc.title	Strain evolution and dopant activation in P-implanted metastable pseudomorphic Si(100)/Ge//0//.//1//2Si//0//.//8//8.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Journal of electronic materials, v.v. 25, no.no.1, pp.87 - 92	-
dc.citation.title	Journal of electronic materials	-
dc.citation.volume	v. 25	-
dc.citation.number	no.1	-
dc.citation.startPage	87	-
dc.citation.endPage	92	-
dc.subject.keywordAuthor	dopant activation	-

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