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dc.contributor.author김용태-
dc.contributor.author이창우-
dc.date.accessioned2024-01-21T20:09:06Z-
dc.date.available2024-01-21T20:09:06Z-
dc.date.created2022-01-10-
dc.date.issued1996-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/144781-
dc.titleAdvantages of Ruo//x bottom electrode in the dielectric and leakage characteristics of (Ba, Sr)TiO//3 capacitor.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJapanese journal of applied physics, v.v. 35, no.no. 12, pp.1246 - 1253-
dc.citation.titleJapanese journal of applied physics-
dc.citation.volumev. 35-
dc.citation.numberno. 12-
dc.citation.startPage1246-
dc.citation.endPage1253-
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