DSpace at KIST: Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.

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DC Field	Value	Language
dc.contributor.author	손창식	-
dc.contributor.author	김성일	-
dc.contributor.author	민병돈	-
dc.contributor.author	김은규	-
dc.contributor.author	민석기	-
dc.contributor.author	최인훈	-
dc.date.accessioned	2024-01-21T20:09:24Z	-
dc.date.available	2024-01-21T20:09:24Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1996-01	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144786	-
dc.title	Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide.	-
dc.type	Article	-
dc.description.journalClass	3	-
dc.identifier.bibliographicCitation	Japanese journal of applied physics, v.v. 35, no.no. 12B, pp.225 - 228	-
dc.citation.title	Japanese journal of applied physics	-
dc.citation.volume	v. 35	-
dc.citation.number	no. 12B	-
dc.citation.startPage	225	-
dc.citation.endPage	228	-
dc.subject.keywordAuthor	carbon	-

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