Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 고석근 | - |
| dc.contributor.author | 윤영수 | - |
| dc.contributor.author | 정형진 | - |
| dc.contributor.author | 김기환 | - |
| dc.contributor.author | 이지현 | - |
| dc.date.accessioned | 2024-01-21T20:09:38Z | - |
| dc.date.available | 2024-01-21T20:09:38Z | - |
| dc.date.created | 2022-01-10 | - |
| dc.date.issued | 1996-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/144790 | - |
| dc.title | Room temperature growth of Cu thin film by nozzle-type partially ionized beam deposition with various acceleration voltages. | - |
| dc.type | Article | - |
| dc.description.journalClass | 3 | - |
| dc.identifier.bibliographicCitation | Thin solid films, v.v. 278, pp.45 - 48 | - |
| dc.citation.title | Thin solid films | - |
| dc.citation.volume | v. 278 | - |
| dc.citation.startPage | 45 | - |
| dc.citation.endPage | 48 | - |
| dc.subject.keywordAuthor | deposition process | - |
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