DSpace at KIST: Electrical property of TiO2 dielectric thin films grown on n-type InP(100) substrates by low-pressure MOCVD

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DC Field	Value	Language
dc.contributor.author	김은규	-
dc.contributor.author	손맹호	-
dc.contributor.author	한영기	-
dc.contributor.author	왕채현	-
dc.contributor.author	염상섭	-
dc.contributor.author	임종수	-
dc.contributor.author	민석기	-
dc.date.accessioned	2024-01-21T20:31:45Z	-
dc.date.available	2024-01-21T20:31:45Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1995-11	-
dc.identifier.issn	1013-7009	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144931	-
dc.title	Electrical property of TiO2 dielectric thin films grown on n-type InP(100) substrates by low-pressure MOCVD	-
dc.title.alternative	저압 MOCVD법으로 n형 InP 위에 성장시킨 TiO2 유전체박막의 전기적 특성	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	응용물리, v.8, no.6, pp.630 - 634	-
dc.citation.title	응용물리	-
dc.citation.volume	8	-
dc.citation.number	6	-
dc.citation.startPage	630	-
dc.citation.endPage	634	-
dc.subject.keywordAuthor	low pressure MOCVD	-
dc.subject.keywordAuthor	thin films	-
dc.subject.keywordAuthor	TiO2	-
dc.subject.keywordAuthor	InP	-
dc.subject.keywordAuthor	MOCVD	-

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