DSpace at KIST: A study on the growth behaviors of MoSi2 diffusion layer formed by CVD of Si on Mo substrate

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DC Field	Value	Language
dc.contributor.author	윤진국	-
dc.contributor.author	변지영	-
dc.contributor.author	김재수	-
dc.contributor.author	최종술	-
dc.date.accessioned	2024-01-21T20:31:48Z	-
dc.date.available	2024-01-21T20:31:48Z	-
dc.date.created	2022-01-10	-
dc.date.issued	1995-11	-
dc.identifier.issn	1738-8228	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/144932	-
dc.publisher	대한금속.재료학회	-
dc.title	A study on the growth behaviors of MoSi2 diffusion layer formed by CVD of Si on Mo substrate	-
dc.title.alternative	Si의 화학증착에 의한 MoSi2 확산층의 성장거동에 관한 연구	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	대한금속 . 재료학회지 = Korean journal of metals and materials, v.33, no.11, pp.1537 - 1543	-
dc.citation.title	대한금속 . 재료학회지 = Korean journal of metals and materials	-
dc.citation.volume	33	-
dc.citation.number	11	-
dc.citation.startPage	1537	-
dc.citation.endPage	1543	-
dc.subject.keywordAuthor	chemical vapor deposition	-

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