MOLECULAR-DYNAMICS STUDY OF THE VACANCY AND VACANCY-HYDROGEN INTERACTIONS IN SILICON

Authors
PARK, YKESTREICHER, SKMYLES, CWFEDDERS, PA
Issue Date
1995-07-15
Publisher
AMERICAN PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.52, no.3, pp.1718 - 1723
Abstract
The neutral vacancy (V) and the four vacancy-hydrogen complexes ({V,H-n}, n = 1,...,4), in silicon are studied in HnSi63 periodic supercells with the ab initio pseudo-atomic-orbital molecular-dynamics method developed by Sankey and co-workers. Results are presented for (i) the equilibrium configurations of V and the {V,H-n} complexes, (ii) the diffusion properties of V and {V,H-1}, (iii) the vibrational modes of the {V,H-n}, and (iv) the interactions between isolated H and V.
Keywords
NEGATIVE-U SYSTEM; CRYSTALLINE SILICON; INTERSTITIAL HYDROGEN; ELECTRONIC-STRUCTURE; VIBRATIONAL-SPECTRA; SI; DIFFUSION; PSEUDOPOTENTIALS; SIMULATIONS; COMPLEXES; NEGATIVE-U SYSTEM; CRYSTALLINE SILICON; INTERSTITIAL HYDROGEN; ELECTRONIC-STRUCTURE; VIBRATIONAL-SPECTRA; SI; DIFFUSION; PSEUDOPOTENTIALS; SIMULATIONS; COMPLEXES; silicon
ISSN
0163-1829
URI
https://pubs.kist.re.kr/handle/201004/145042
DOI
10.1103/PhysRevB.52.1718
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KIST Article > Others
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