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dc.contributor.authorLIE, DYC-
dc.contributor.authorSONG, JH-
dc.contributor.authorVANTOMME, A-
dc.contributor.authorEISEN, F-
dc.contributor.authorNICOLET, MA-
dc.contributor.authorTHEODORE, ND-
dc.contributor.authorCARNS, TK-
dc.contributor.authorWANG, KL-
dc.date.accessioned2024-01-21T20:44:02Z-
dc.date.available2024-01-21T20:44:02Z-
dc.date.created2021-09-01-
dc.date.issued1995-03-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145137-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSOLID-PHASE EPITAXY-
dc.subjectNONUNIFORM CRYSTALLINE FILMS-
dc.subjectSI1-XGEX ALLOY LAYERS-
dc.subjectX-RAY-DIFFRACTION-
dc.subjectION-IMPLANTATION-
dc.subjectSUPERLATTICES-
dc.subjectREGROWTH-
dc.subjectACCUMULATION-
dc.subjectSILICON-
dc.subjectGAAS-
dc.titleDEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100)-
dc.typeArticle-
dc.identifier.doi10.1063/1.358755-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.77, no.6, pp.2329 - 2338-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume77-
dc.citation.number6-
dc.citation.startPage2329-
dc.citation.endPage2338-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1995QN14800015-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusSOLID-PHASE EPITAXY-
dc.subject.keywordPlusNONUNIFORM CRYSTALLINE FILMS-
dc.subject.keywordPlusSI1-XGEX ALLOY LAYERS-
dc.subject.keywordPlusX-RAY-DIFFRACTION-
dc.subject.keywordPlusION-IMPLANTATION-
dc.subject.keywordPlusSUPERLATTICES-
dc.subject.keywordPlusREGROWTH-
dc.subject.keywordPlusACCUMULATION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusGAAS-
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