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DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100)

Authors

LIE, DYC; SONG, JH; VANTOMME, A; EISEN, F; NICOLET, MA; THEODORE, ND; CARNS, TK; WANG, KL

Issue Date

1995-03-15

Publisher

AMER INST PHYSICS

Citation

JOURNAL OF APPLIED PHYSICS, v.77, no.6, pp.2329 - 2338

Keywords

SOLID-PHASE EPITAXY; NONUNIFORM CRYSTALLINE FILMS; SI1-XGEX ALLOY LAYERS; X-RAY-DIFFRACTION; ION-IMPLANTATION; SUPERLATTICES; REGROWTH; ACCUMULATION; SILICON; GAAS; SOLID-PHASE EPITAXY; NONUNIFORM CRYSTALLINE FILMS; SI1-XGEX ALLOY LAYERS; X-RAY-DIFFRACTION; ION-IMPLANTATION; SUPERLATTICES; REGROWTH; ACCUMULATION; SILICON; GAAS

ISSN

0021-8979

URI

https://pubs.kist.re.kr/handle/201004/145137

DOI

10.1063/1.358755

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KIST Article > Others

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