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dc.contributor.authorPARK, YK-
dc.contributor.authorMYLES, CW-
dc.date.accessioned2024-01-21T21:01:19Z-
dc.date.available2024-01-21T21:01:19Z-
dc.date.created2022-01-11-
dc.date.issued1995-01-15-
dc.identifier.issn0163-1829-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145199-
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.subjectHYDROGENATED AMORPHOUS-SILICON-
dc.subjectTIGHT-BINDING-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectMETASTABLE DEFECTS-
dc.subjectSIMULATIONS-
dc.subjectMODELS-
dc.subjectCONDUCTIVITY-
dc.subjectGENERATION-
dc.subjectSTATES-
dc.subjectBONDS-
dc.titleMOLECULAR-DYNAMICS STUDY OF DEFECT FORMATION IN A-SI-H-
dc.typeArticle-
dc.identifier.doi10.1103/PhysRevB.51.1671-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.51, no.3, pp.1671 - 1679-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume51-
dc.citation.number3-
dc.citation.startPage1671-
dc.citation.endPage1679-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosidA1995QH79000033-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusHYDROGENATED AMORPHOUS-SILICON-
dc.subject.keywordPlusTIGHT-BINDING-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusMETASTABLE DEFECTS-
dc.subject.keywordPlusSIMULATIONS-
dc.subject.keywordPlusMODELS-
dc.subject.keywordPlusCONDUCTIVITY-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusSTATES-
dc.subject.keywordPlusBONDS-
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