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dc.contributor.author김용태-
dc.contributor.authorC. S. Kwon-
dc.contributor.authorD. J. Kim-
dc.contributor.authorJ. Y. Lee-
dc.contributor.authorI. H. Choi-
dc.date.accessioned2024-01-21T21:09:30Z-
dc.date.available2024-01-21T21:09:30Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145338-
dc.titleThe properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJ. of the Korean vacuum soc., v.v. 4, pp.79 - 83-
dc.citation.titleJ. of the Korean vacuum soc.-
dc.citation.volumev. 4-
dc.citation.startPage79-
dc.citation.endPage83-
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