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dc.contributor.authorKim, Yong Tae-
dc.contributor.authorLee, Chang Woo-
dc.date.accessioned2024-01-21T21:12:47Z-
dc.date.available2024-01-21T21:12:47Z-
dc.date.created2022-01-10-
dc.date.issued1995-01-
dc.identifier.issn1023-4462-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145394-
dc.description.abstractCopper thin films are deposited on amorphous tungsten nitride diffusion barriers by a metal-organic chemical vapor deposition method. The deposition rate and preferential orientation of (111) vs. (200) ratio of Cu film are considerably lower than those of Cu films deposited on SiO2, boro-phospho-silica glass, and Si due to substrate-driven reaction. RBS and XRD measurements clearly show that 100-800 angstrom amorphous W67N33 layer successfully executes the role of diffusion barrier for Cu during the annealing process at 800°C for 30 min.-
dc.languageEnglish-
dc.publisherChinese Institute of Electrical Engineering, Taipei, Taiwan-
dc.subjectAmorphous materials-
dc.subjectAnnealing-
dc.subjectCopper-
dc.subjectGlass-
dc.subjectMetallic films-
dc.subjectMetallizing-
dc.subjectMetallorganic chemical vapor deposition-
dc.subjectPlasma applications-
dc.subjectRutherford backscattering spectroscopy-
dc.subjectSilica-
dc.subjectThin films-
dc.subjectX ray diffraction-
dc.subjectBorophosphosilica glass-
dc.subjectDiffusion barrier-
dc.subjectTungsten nitride-
dc.subjectTungsten compounds-
dc.titlePlasma deposited amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, v.2, no.1, pp.7 - 11-
dc.citation.titleJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an-
dc.citation.volume2-
dc.citation.number1-
dc.citation.startPage7-
dc.citation.endPage11-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-0029241968-
dc.type.docTypeArticle-
dc.subject.keywordPlusAmorphous materials-
dc.subject.keywordPlusAnnealing-
dc.subject.keywordPlusCopper-
dc.subject.keywordPlusGlass-
dc.subject.keywordPlusMetallic films-
dc.subject.keywordPlusMetallizing-
dc.subject.keywordPlusMetallorganic chemical vapor deposition-
dc.subject.keywordPlusPlasma applications-
dc.subject.keywordPlusRutherford backscattering spectroscopy-
dc.subject.keywordPlusSilica-
dc.subject.keywordPlusThin films-
dc.subject.keywordPlusX ray diffraction-
dc.subject.keywordPlusBorophosphosilica glass-
dc.subject.keywordPlusDiffusion barrier-
dc.subject.keywordPlusTungsten nitride-
dc.subject.keywordPlusTungsten compounds-
dc.subject.keywordAuthoramorphous PECVD-W//6//7N//3//3 layer-
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