MEASUREMENT OF PARTICLE DEPOSITION VELOCITY TOWARD A HORIZONTAL SEMICONDUCTOR WAFER BY USING A WAFER SURFACE SCANNER

Authors
BAE, GNLEE, CSPARK, SO
Issue Date
1994-07
Publisher
ELSEVIER SCIENCE INC
Citation
AEROSOL SCIENCE AND TECHNOLOGY, v.21, no.1, pp.72 - 82
Abstract
The average particle deposition velocity toward a horizontal semiconductor wafer in a vertical airflow was measured by a wafer surface scanner (PMS SAS-3600) to shorten the exposure time and hence to improve repeatability. Polystyrene latex (PSL) spheres with diameters between 0.2 and 1.0 mum were used. For the present experiment, convection, diffusion, and sedimentation comprise important agents of the deposition mechanism. The mean and standard deviation of average deposition velocities were obtained from more than 10 data sets for each PSL sphere size, and the deposition velocity distributions from the measurement data were compared to the theoretical distributions.
Keywords
particle deposition velocity; wafer; wafer surface scanner
ISSN
0278-6826
URI
https://pubs.kist.re.kr/handle/201004/145549
DOI
10.1080/02786829408959697
Appears in Collections:
KIST Article > Others
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